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| IGBTs 2PG402 Insulated Gate Bipolar Transistor s Features q High breakdown voltage: VCES = 400V q Allowing to control large current: IC(peak) = 130A q Housed in the surface mounting package unit: mm 6.50.1 5.30.1 4.350.1 3.00.1 q For flash-light for use in a camera 2.30.1 0.2max. 5.50.1 7.30.1 9.80.1 1.00.2 s Applications s Absolute Maximum Ratings (TC = 25C) Parameter Collector to emitter voltage Gate to emitter voltage Collector current Allowable power dissipation Channel temperature Storage temperature DC Pulse TC = 25C Ta = 25C Symbol VCES VGES IC ICP PC Tch Tstg Ratings 400 8 5 130 10 1 150 -55 to +150 Unit V V A A W C C 0.850.1 4.60.1 2.50.1 2.50.1 0.750.1 0.50.1 0.05 to 0.15 1.00.1 2.30.1 1 2 3 Marking 1: Emitter 2: Collector 3: Gate U Type Package s Electrical Characteristics (TC = 25C) Parameter Collector to emitter cut-off current Gate to emitter leakage current Collector to emitter breakdown voltage Gate threshold voltage Collector to emitter saturation voltage Input capacitance (Common Emitter) Turn-on time (delay time) Rise time Turn-off time (delay time) Fall time Symbol ICES IGES VCES VGE(th) VCE(sat) Cies td(on) tr td(off) tf VCC = 300V, IC = 130A VGE = 5V, Rg = 25 Conditions VCE = 320V, VGE = 0 VGE = 8V, VCE = 0 IC = 1mA, VGE = 0 VCE = 10V, IC = 1mA VGE = 5V, IC = 5A VGE = 5V, IC = 130A VCE = 10V, VGE = 0, f = 1MHz 1930 130 1.4 350 1.5 400 0.5 1.5 2 10 min typ max 10 1 Unit A A V V V pF ns s ns s 1 IGBTs IC VCE Collector to emitter saturation voltage VCE(sat) (V) 200 TC=25C 10 VGE=5V TC=25C 2PG402 VCE(sat) IC 200 IC VGE VCE=10V TC=25C Collector current IC (A) 3 VGE=8V 120 5V 4V Collector current IC (A) 10 100 1000 160 160 120 1 Ta=0C 80 3V 100C 0.3 25C 80 40 2V 40 0 0 4 8 12 16 20 24 0.1 0.01 0 0.1 1 0 2 4 6 8 10 12 Collector to emitter voltage VCE (V) Collector current IC (A) Gate to emitter voltage VGE (V) Cies, Coes, Cres VCE Input capacitance (Common emitter), Output capacitance (Common emitter), Reverse transfer capacitance (Common emitter) Cies,Coes,Cres (pF) 10000 15 PC Ta Collector power dissipation PC (W) (1) TC=Ta (2) With a 50 x 50 x 2mm Al heat sink (3) Without heat sink (1) 9 f=1MHz TC=25C Cies 12 1000 100 Coes 6 (2) 3 (3) 0 10 Cres 1 0 100 200 300 400 0 25 50 75 100 125 150 Collector to emitter voltage VCE (V) Ambient temperature Ta (C) 2 |
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